| 摘要 |
<p>A semiconductor memory device and a manufacturing method thereof are provided to prevent a distribution change of a threshold voltage by forming a first conductive film with NH3 gas in successively forming the first conductive film and a second conductive film as a conductive film for a floating gate. A tunnel insulation film(102) is formed on a top of a semiconductor substrate(100), and has thickness capable of generating FN tunneling phenomenon in a program operation or a removing operation. A floating gate(105) is formed on the tunnel insulation film. The floating gate is formed by laminating a first conductive film(104) and a second conductive film(106) having different particle sizes. The first conductive film is made of an undoped polysilicon film, and is formed by mixing SiH4, NH3, and N2 gases under a temperature of 600~750°C.</p> |
