发明名称 |
TRENCH SCHOTTKY DEVICE WITH SINGLE BARRIER |
摘要 |
A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas between trenches with a barrier contact made to the mesas only. Palladium, titanium or any conventional barrier metal can be used.
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申请公布号 |
WO2007047713(A3) |
申请公布日期 |
2009.04.30 |
申请号 |
WO2006US40620 |
申请日期 |
2006.10.18 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION;RICHIERI, GIOVANNI;CARTA, ROSSANO |
发明人 |
RICHIERI, GIOVANNI;CARTA, ROSSANO |
分类号 |
H01L27/095 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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