| 摘要 |
A method for forming a contact of a semiconductor device is provided to increase a contact surface of a bottom of a contact by widely etching a bottom part of a contact hole with a plasma etching process. A bottom wiring(102) is formed on a semiconductor substrate(100). A bottom insulation film, an etch stop film(104), and a top insulation film are successively laminated on a top of a whole structure including the bottom wiring. A first contact hole is formed by successively etching the top insulation film and the etch stop film. A second contact hole is formed by etching the bottom insulation film. A bottom surface of the second contact hole is wider than a bottom surface of the first contact hole. A contact(108) is formed by filling the second contact hole with conductive material.
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