| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a silicon wafer, which solves a problem wherein outside impurities are adsorbed to surfaces of the silicon wafer even if time has elapsed, and allows a process to be simply and safely implemented. SOLUTION: This method for cleaning a silicon wafer is characteristically executed by including: a step S11 of cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; a step S12 of rinsing the surfaces of the silicon wafer, cleaned in the step S11, using deionized water; a step S13 of cleaning the surfaces of the silicon wafer, rinsed in the step S12, using a cleaning solution including hydrochloric acid, ozone water and deionized water; a step S14 of rinsing the surfaces of the silicon wafer, cleaned in the step S13, using deionized water; and a step S15 of drying the surfaces of the silicon wafer, rinsed in the step S14. The method is advantageous because a stable surface oxide film is formed on the surfaces of the silicon wafer using a substance having strong oxidizing ability while a cleaning process is performed. COPYRIGHT: (C)2009,JPO&INPIT
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