| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a grown surface as an "a" surface or an "m" surface and also having excellent high-output characteristics and high reliability. SOLUTION: The nitride semiconductor laser element has a laminated structure formed by laminating a plurality of nitride semiconductor layers of hexagonal crystal semiconductors. A waveguide passage construction through which laser light guides waves is formed in the laminated structure. The nitride semiconductor layers are laminated in the laminated structure in a direction almost vertical to a "c" axis of the hexagonal crystal semiconductor constituting the nitride semiconductor layer. A first resonator end surface or one side surface of the waveguide passage construction is a "c" surface of Ga polarity, and a second resonator end surface or a side surface of the waveguide passage construction opposed to the first resonator end surface is a "c" surface of N polarity. A crystalline nitride-contained film is formed on a surface of the first resonator end surface. The reflection factor of the first resonator end surface is smaller than that of the second resonator end surface. COPYRIGHT: (C)2009,JPO&INPIT
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