发明名称 |
HIGH RESISTIVITY SILICON CARBIDE |
摘要 |
A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1<smallcaps>E</smallcaps>5 Omegacm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
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申请公布号 |
US2009111678(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070927326 |
申请日期 |
2007.10.29 |
申请人 |
SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
发明人 |
HAERLE ANDREW G.;PERRY EDWARD A. |
分类号 |
C04B35/565 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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