发明名称 APPARATUS DEPOSITION OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A deposition apparatus of a semiconductor device and a manufacturing method of a semiconductor device are provided to improve a gap fill property of an insulation film for device isolation by performing a vibration process in forming a device isolation film. A hard mask film pattern(102) is formed on a semiconductor substrate(100). A trench is formed by etching a device isolation region of the semiconductor substrate and the hard mask film pattern. An insulation film(105) is formed on a whole structure including the trench. A void and a core inside the insulation film are removed by performing a vibration process. A device isolation film is formed by performing a flattening process in order to expose a top of the hard mask film pattern.
申请公布号 KR20090042428(A) 申请公布日期 2009.04.30
申请号 KR20070108176 申请日期 2007.10.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JAE WOON;ROH, CHI HYEONG
分类号 H01L21/76 主分类号 H01L21/76
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