发明名称 |
APPARATUS DEPOSITION OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A deposition apparatus of a semiconductor device and a manufacturing method of a semiconductor device are provided to improve a gap fill property of an insulation film for device isolation by performing a vibration process in forming a device isolation film. A hard mask film pattern(102) is formed on a semiconductor substrate(100). A trench is formed by etching a device isolation region of the semiconductor substrate and the hard mask film pattern. An insulation film(105) is formed on a whole structure including the trench. A void and a core inside the insulation film are removed by performing a vibration process. A device isolation film is formed by performing a flattening process in order to expose a top of the hard mask film pattern.
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申请公布号 |
KR20090042428(A) |
申请公布日期 |
2009.04.30 |
申请号 |
KR20070108176 |
申请日期 |
2007.10.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JAE WOON;ROH, CHI HYEONG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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