| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory generating a highly accurate write voltage. SOLUTION: The resistance change memory is equipped with: a memory cell 11 which is connected to a first node n1 and can be shifted between a first resistance state and a second resistance state; a first constant current source 61_0 connected to a second node; a first replica cell 50_0 which is connected to the second node n2, generates a write voltage used for rewriting from the first resistance state to the second resistance state, and is fixed in the first resistance state; and a first control circuit for keeping a first node voltage equal to a second node voltage when the memory cell is set to the second resistance state. COPYRIGHT: (C)2009,JPO&INPIT |
