| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing solution for metals, which can compatibly accelerate a polishing speed and lower dishing when polishing a body to be polished (wafer), and to provide a chemical mechanical polishing method using the polishing solution. SOLUTION: The polishing solution for metals is used for the chemical mechanical polishing in a semiconductor device manufacturing process, and contains a compound expressed by general formula: (X<SP>1</SP>)<SB>n</SB>-L (in the general formula (1), wherein X<SP>1</SP>represents a heterocycle including at least one nitrogen atom, n represents an integer of≥2, and L represents a bonding group of bivalent or more, and n pieces of X<SP>1</SP>may be respectively same or different), an oxidant, and organic acid. COPYRIGHT: (C)2009,JPO&INPIT |
