| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that has its occupied area contracted and its malfunctions controlled. SOLUTION: The nonvolatile semiconductor storage device includes: first laminated parts 110A and 110B where primary insulating layers and conductive layer are alternately laminated; second laminated parts 120A and 120B laminated such that they are prepared on upper or lower surfaces of the first laminated parts and secondary conductive layers are formed between secondary insulating layers; and third laminated parts 130A and 130B located on the upper portions of the first or second laminated parts. The third laminated parts include: contact layers 131 formed so as to be in contact with second semiconductor layers of the second laminated parts, extend in an X direction, and be side by side in a Y direction that is orthogonal with the X direction; and contact plug layers 132 formed such that they are in contact with any of the contact layers 131 and extend in a lamination direction. The contact plug layers 132 are arranged so that their X directional positions mutually differ. COPYRIGHT: (C)2009,JPO&INPIT
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