| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of reducing the substrate occupation area of a selection transistor without impairing cutoff characteristics of the selection transistor. SOLUTION: The nonvolatile semiconductor storage device as one embodiment of the present invention includes a substrate, a memory string formed by connecting in series a plurality of nonvolatile memory cells each having a first diffusion region formed on the substrate, a charge storage layer formed on the substrate, and a control gate, and the selection transistor having a first diffusion region at one end of the memory string, a first selection gate formed on the substrate, a semiconductor formed in a column shape nearly vertically upward from the substrate, and a second diffusion region formed on the semiconductor. COPYRIGHT: (C)2009,JPO&INPIT
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