| 摘要 |
A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.
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