发明名称 CMOS image sensor and fabricating method thereof
摘要 A CMOS image sensor and fabricating method thereof are disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The present invention includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.
申请公布号 US2009108310(A1) 申请公布日期 2009.04.30
申请号 US20080285421 申请日期 2008.10.03
申请人 SEO DONG HEE;CHOI CHEE HONG 发明人 SEO DONG HEE;CHOI CHEE HONG
分类号 H01L27/148;H01L21/70;H01L27/14;H01L27/146;H01L31/0256;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/148
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