| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single particle film etching mask suitably used for manufacture of a fine structure (luminance improving structure) on the surface of a semiconductor light emitting element, its manufacturing method, a manufacturing method of the fine structure using the single particle film etching mask, and the semiconductor light emitting element having the fine structure on a light extracting surface. <P>SOLUTION: In this semiconductor light emitting element formed by laminating semiconductor multi-layer films including luminescent layers on a substrate, the fine structure forming the aggregate of fine protuberances is formed on at least a part of a surface from which light generated in the luminescent layer is extracted, the protuberance has a height of 50 nm or higher, an aspect ratio of 0.4 or more, and it is a conical and/or pseudo-conical fine protuberance having a pitch of not more than the wavelength of generated light. <P>COPYRIGHT: (C)2009,JPO&INPIT |
