| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device having a vertical semiconductor element whose surge resistance can be improved. SOLUTION: An n<SP>+</SP>-type region 2a is formed apart from a p-type base region 3 below a contact region 5 in an n-type drift layer 2. Consequently, a breakdown is made at an upper corner part 2b of the n<SP>+</SP>-type region 2a and a body break can be made between the p-type base region 3 and n<SP>+</SP>-type region 2a. Carriers generated by the breakdown can be made not to flow below n<SP>+</SP>-type source regions 6 and 7, so when a surge is generated, a parasitic transistor comprising the n<SP>+</SP>-type source regions 6 and 7, the p-type base region 3, and the n-type drift layer 2 does not operate, so that the resistance can be improved. A planar type MOSFET can be obtained which can be improved in surge resistance. COPYRIGHT: (C)2009,JPO&INPIT |
