SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a gate charge quantity can be reduced without increasing on-resistance and a method of manufacturing the same, and to provide a semiconductor device having reduced on-resistance and a method of manufacturing the same. SOLUTION: In the semiconductor device 1, an N-type layer 4 and a body layer 5 are laminated on an N+type substrate 2. A gate trench 6 passes through the body layer 5 from the surface of the body layer 5 and the deepest portion thereof reaches the N-type layer 4. A gate insulating film 7 is formed inside the gate trench 6. On the inner side of the gate insulating film 7 inside the gate trench 6, a gate electrode 8 is embedded. Also, a source region 9 is formed on the surface layer portion of the body layer 5. Then, the bottom surface 8A of the gate electrode 8 and the upper surface 4A of the N-type layer 4 are flush with each other. COPYRIGHT: (C)2009,JPO&INPIT