发明名称 |
Method of forming nonvolatile memory device having floating gate and related device |
摘要 |
A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.
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申请公布号 |
US2009108323(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20080228772 |
申请日期 |
2008.08.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEE JUNG-GEUN;SON HO-MIN;HYUNG YONG-WOO;HAN JAE-JONG;LIM TAEK-JIN |
分类号 |
H01L29/788;H01L21/22;H01L21/3215 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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