| 摘要 |
Disclosed herein are a metal-ferroelectric-metal- substrate (MFMS) field-effect transistor (FET), an MFMS- ferroelectric memory device, and method of manufacturing the same. The MFMS-FET and the ferroelectric memory device in accordance with the present invention include: a substrate including source and drain regions, and a channel region formed therebetween; a buffer layer formed on the top of the channel region of the substrate; a ferroelectric layer formed on the buffer layer; and a gate electrode formed on the ferroelectric layer, wherein the buffer layer is formed of a conductive material. |
