发明名称 METHOD OF MANUFACTURING 3-D SPIRAL STACKED INDUCTOR ON SEMICONDUCTOR MATERIAL
摘要 <p>METHOD OF MANUFACTURING 3-D SPIRAL STACKED INDUCTOR ON SEMICONDUCTOR MATERIAL A method of manufacturing a 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and a dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.</p>
申请公布号 SG151088(A1) 申请公布日期 2009.04.30
申请号 SG20050051685 申请日期 2003.09.02
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 CHOON-BENG SIA;SENG YEO KIAT;SHAO-FU SANFORD CHU;YEOW NG CHENG;WAI CHEW KOK;LING GOH WANG
分类号 H01F41/04;H01F17/00;H01L21/02;H01L27/08;(IPC1-7):H01L21/02 主分类号 H01F41/04
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