| 摘要 |
<p>Process for Cleaning a Semiconductor Wafer The invention relates to a process for cleaning a semiconductor wafer, comprising the formation of a first liquid film on a surface to be cleaned of the semiconductor wafer, the first liquid film containing hydrogen fluoride and ozone; replacement of the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removal of the second liquid film.</p> |
