| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor pressure sensor capable of securing sufficient position accuracy. SOLUTION: A recession 4 opened to a first surface of a silicon substrate 3 is formed, and the first surface of the silicon substrate 3 and a silicon substrate 1 are pasted with each other through an insulating film 2. A second surface of the silicon substrate 3 is polished, and a diaphragm 6 is formed on a bottom part of the recession 4, and an insulating film 9 is formed on the second surface of the silicon substrate 3 including the diaphragm 6. After that, positioning is performed by an IR aligner with the usage of one of the recession 4 and an alignment recession formed so as to open to the first surface of the silicon substrate 3 simultaneously with the recession 4, and then, an insulating film having an alignment mark recession 18 is formed on the second surface of the silicon substrate 3, and at least one of a gauge resistor, a contact hole for the gauge resistor and a wiring for the gauge resistor is formed with the usage of the alignment mark recession 18. COPYRIGHT: (C)2009,JPO&INPIT
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