| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device with improved resistance characteristic against processing damage. SOLUTION: The semiconductor device has a semiconductor substrate 101, and a capacitor which is provided on the upper side of the semiconductor substrate and composed by placing a dielectric film 116 in between a lower electrode 115 and an upper electrode 117. The upper electrode has a first MOx type conductive oxide film ("M" is a metal element, "O" is an oxygen element, and x>0) 117b having a crystal structure, and a second MOx type conductive oxide film ("M" is a metal element, "O" is an oxygen element, and x>0) 117c which is formed on the first MOx type conductive oxide film, has a crystal structure, and has a smaller oxygen ratio than the first MOx type conductive oxide film. COPYRIGHT: (C)2009,JPO&INPIT
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