发明名称 |
FINFET MEMORY DEVICE WITH DUAL SEPARATE GATES AND METHOD OF OPERATION |
摘要 |
A FinFET device comprises a front gate (FG) and a separate back gate (BG) disposed on opposite sides of the fine. The fin structure may act as a floating body of a volatile memory cell. The front and back gates may be doped with the same or opposite polarity, and may be biased oppositely. A plurality of FinFETs may be connected in a memory array with single column erase, or double column erase capability.
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申请公布号 |
US2009108351(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070925177 |
申请日期 |
2007.10.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG HAINING S.;WONG ROBERT C.;ZHU HUILONG |
分类号 |
H01L29/786;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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