发明名称 |
METHOD FOR FABRICATING TRANSISTOR IN SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench.
|
申请公布号 |
US2009111255(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20080259799 |
申请日期 |
2008.10.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
EUN YONG SEOK;KIM SU HO;LEE AN BAE;SEO HYE JIN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|