发明名称 |
Method of and circuit for protecting a transistor formed on a die |
摘要 |
A method of protecting a transistor formed on a die of an integrated circuit is disclosed. The method comprises forming an active region of the transistor on the die; forming a gate of the transistor over the active region; coupling a primary contact to the gate of the transistor; coupling a programmable element between the gate of the transistor and a protection element; and decoupling the protection element from the gate of the transistor by way of the programmable element. Circuits for protecting a transistor formed on a die of an integrated circuit are also disclosed.
|
申请公布号 |
US2009108337(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070977810 |
申请日期 |
2007.10.26 |
申请人 |
XILINX, INC. |
发明人 |
LUO YUHAO;WU SHUXIAN;WU XIN X.;AHN JAE-GYUNG;NAYAK DEEPAK KUMAR;GITLIN DANIEL |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|