发明名称 |
SEMICONDUCTOR DEVICES WITH DIFFERENT DIELECTRIC THICKNESSES |
摘要 |
An integrated circuit with devices having dielectric layers with different thicknesses. The dielectric layers include a high-k dielectric and some of the dielectric layers include an oxide layer that is formed from an oxidation process. Each device includes a layer including germanium or carbon located underneath the electrode stack of the device. A silicon cap layers is located over the layer including germanium or carbon.
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申请公布号 |
US2009108296(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070931565 |
申请日期 |
2007.10.31 |
申请人 |
KARVE GAURI V;HALL MARK D;SAMAVEDAM SRIKANTH B |
发明人 |
KARVE GAURI V.;HALL MARK D.;SAMAVEDAM SRIKANTH B. |
分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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