METHOD FOR FABRICATING SUPER-STEEP RETROGRADE WELL MOSFET ON SOI OR BULK SILICON SUBSTRATE, AND DEVICE FABRICATED IN ACCORDANCE WITH THE METHOD
摘要
<p>A method is provided to fabricate a semiconductor device, where the method includes providing a substrate comprised of crystalline silicon; implanting a ground plane in the crystalline silicon so as to be adjacent to a surface of the substrate, the ground plane being implanted to exhibit a desired super-steep retrograde well (SSRW) implant doping profile; annealing implant damage using a substantially diffusionless thermal annealing to maintain the desired super-steep retrograde well implant doping profile in the crystalline silicon and, prior to performing a shallow trench isolation process, depositing a silicon cap layer over the surface of the substrate. The substrate may be a bulk Si substrate or a Si-on-insulator substrate. The method accommodates the use of an oxynitride gate stack structure or a high dielectric constant oxide/metal (high-K/metal) gate stack structure. The various thermal processes used during fabrication are selected/controlled so as to maintain the desired super-steep retrograde well implant doping profile in the crystalline silicon.</p>
申请公布号
WO2009053327(A1)
申请公布日期
2009.04.30
申请号
WO2008EP64113
申请日期
2008.10.20
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;CAI, JIN;MAJUMDAR, AMLAN;NING, TAK, HUNG;REN, ZHIBIN
发明人
CAI, JIN;MAJUMDAR, AMLAN;NING, TAK, HUNG;REN, ZHIBIN