INTEGRATED ELECTROLESS DEPOSITION SYSTEM

摘要

Embodiments of the invention provide methods for depositing a material onto a surface of a substrate (120) by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method of depositing a seed layer (129) on a substrate (120) with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer (129) on a substrate (120), fill interconnect features on a substrate (120), or sequentially deposit both a seed layer (129) and fill interconnect features on the substrate (120). One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool (200) configured to deposit a material onto a substrate surface by using one or more electroless (202, 204), electrochemical plating (210, 212), CVD and/or ALD processing chambers (235). In one aspect, a ruthenium-containing catalytic layer is formed.