发明名称 |
Phase Change Memory with Diodes Embedded in Substrate |
摘要 |
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.
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申请公布号 |
US2009108249(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070932574 |
申请日期 |
2007.10.31 |
申请人 |
LAI FANG-SHI JORDAN;HO CHIAHUA;YANG FU-LIANG |
发明人 |
LAI FANG-SHI JORDAN;HO CHIAHUA;YANG FU-LIANG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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