SEMICONDUCTOR LASER GYRO

摘要

A semiconductor laser gyro includes: a laser element (20) having a resonator having an annular light orbit (23) and generating a laser beam (L1) and a laser beam (L2) which propagate in different directions to each other; pull-out means for pulling out the laser beam (L1) and the laser beam (L2) from the light orbit (23); and detection means for detecting a frequency difference between the laser beam (L1) and the laser beam (L2) which have been pulled out. The light orbit (23) of the resonator has an active region (21) which generates a light amplification width and a passive region (22) which does not generate a light amplification width.An active layer of the active region (21) and a light guide layer of the passive region (22) are respectively sandwiched by a lower clad layer and an upper clad layer. The upper clad layer has a ridge shape while the lower clad layer spreads in a planar shape. The active layer of the active region and the light guide layer of the passive region are connected with a Butt/joint structure.