BAFFLE, SUBSTRATE SUPPORTING APPARATUS AND PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus includes a chamber, a shielding member provided at an inner- upper portion of the chamber, a substrate supporting unit disposed under the shielding member and supporting a substrate, an electrode injecting reacting gas to an undersurface of the substrate, and a baffle discharging the reaction gas at a location identical to or higher than a horizontal plane of the substrate seating on the supporting unit. Since the gas discharge is realized at the location identical to or higher than the horizontal plane of the substrate, it becomes possible to make a residence time of the reaction gas at the central portion and edge of the undersurface of the substrate uniform. In addition, a plasma processing apparatus includes a chamber, a shielding member provided in the chamber, a first high frequency generator disposed opposing the shielding member and configured to generate plasma in the chamber, antennas arranged near an outer circumference of a sidewall of the chamber at a predetermined distance, a second high frequency generator including a high frequency power source connected to the antennas, and a substrate supporting unit supporting a substrate between the shielding member and the first high frequency generator. A second high frequency signal is applied after a first high frequency is applied from the first high frequency generator. Therefore, leakage of reaction gas and plasma located under the substrate can be prevented, and thus the etching rate and uniformity of the bottom side of the substrate can be improved.