| 摘要 |
A patterning method of a semiconductor device is provided to tilt a pattern edge of a film to be etched and to uniformly form thickness of films by changing an exposure mask pattern. A film(202) to be etched is formed on a semiconductor substrate(200) including a first region and a second region. A photoresist film(204) is formed on the film to be etched. The semiconductor substrate is exposed with an exposure mask(206) on which an exposure pattern is formed. A top edge of the exposure pattern is tilted in a part corresponding to the first region. A photoresist pattern is formed on the semiconductor substrate with a developing process. The film to be etched is patterned by performing an etching process with the photoresist pattern. |
