FREQUENCY DOUBLING USING A PHOTO-RESIST TEMPLATE MASK

摘要

A method for patterning film is provided to ensure high selectivity for an amorphous carbon hard mask layer when removing the photoresist template mask and to double the frequency of lithographic process by using photo-resist template mask. A method for patterning film comprises the steps of: (202) forming the photoresist layer at the upper part of the device layer; (204) patterning the photoresist layer to form a photoresist template mask; (206) depositing the spacer-forming material layer at the upper part of the photoresist template mask; (208) etching the spacer-forming material layer to form a spacer mask and expose the photoresist template mask; (210) removing the photoresist template mask; and (212) transferring the image of the spacer mask to a device layer.