| 摘要 |
An apparatus for treating gas by using a filler is provided, for example, using an agent for detoxicating a waste gas which includes toxic substances such as silane, phosphine, hydrogen chloride, dichlorosilane, ammonia and/or various gases used in a semiconductor manufacturing process, a liquid crystal display element manufacturing process or the like. A detoxicating agent layer is provided in a flow path within a gas treating column, and ring-shaped baffle plates are provided so as to contact the upstream surface and the downstream surface of the detoxicating agent layer, with the outer edge of the baffle plate making contact with the wall of the flow path. A width of the baffle plate is set to not smaller than five times the outer diameter of the filler and not larger than 9% of the inner diameter of the gas treating column when the outer diameter di of the filler and inner diameter D of the gas treating column satisfy a relation of 5di<=0.09D, and is set to not smaller than 2% and not larger than 9% of the inner diameter of the gas treating column when a relation of 5di>0.09D is satisfied.
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