| 摘要 |
This invention provides a magnetic tunnel junction element with a magnetization free layer having a laminated structure constructed so that at least a laminated structure comprising a tunnel barrier layer (107) held between a magnetization fixation layer having a multilayer structure (105, 106) and a magnetization free layer having a multilayer structure (108, 109, 110) is provided on a substrate (101). The magnetization fixation layer having a multilayer structure, a tunnel barrier layer, and a magnetization free layer having a multilayer structure are stacked in that order from the substrate side. The magnetization free layer having a multilayer structure has a sandwich structure comprising an intermediate layer (109) held between a first magnetization free layer (108) and a second magnetization free layer (110). The intermediate layer is formed of any one of a metal nitride having a single-layer structure, an alloy having a single-layer structure, and a multilayered film comprising a plurality of films of a metal, a metal nitride or an alloy stacked on top of each other. After the formation of the laminated structure, annealing is carried out in a magnetic field to apply predetermined magnetization to an MTJ element (100). |
