| 摘要 |
<p>An e-beam writing method for a mask is provided to improve uniformity of a pattern line width of a whole mask region by performing a stable pattern line width in a mask region. A mask(100) in which an e-beam writing is performed is prepared. An anti-reflection shield(200) is positioned on the mask, and shields an outer ring of a writing region of the mask. A diffused reflection of the e-beam is prevented by using the e-beam inside a region of the anti-reflection shield. The e-beam crosses the shield region, and is moved to the writing region of the mask. A stabilized e-beam performs the e-beam writing by successively scanning the writing region of the mask into right and left.</p> |
