发明名称 SPUTTERING TARGET FOR MAGNETIC RECORDING FILM AND METHOD FOR MANUFACTURING SUCH SPUTTERING TARGET
摘要 Provided is a sputtering target for a magnetic recording film, by which film formation efficiency and film characteristics can be improved by suppressing growth of crystal grains, reducing magnetic permeability and increasing density. A method for manufacturing such sputtering target is also provided. The sputtering target is composed of a matrix phase, which includes Co and Pt, and a metal oxide phase. The sputtering target has a magnetic permeability of 6-15 and a relative density of 90% or more.
申请公布号 WO2009054369(A1) 申请公布日期 2009.04.30
申请号 WO2008JP69021 申请日期 2008.10.21
申请人 MITSUI MINING & SMELTING CO., LTD.;KATO, KAZUTERU 发明人 KATO, KAZUTERU
分类号 C23C14/34;B22F1/00;B22F3/00;B22F3/10;B22F3/14;C22C1/04;C22C1/05;C22C19/07;C22C32/00;C23C14/06 主分类号 C23C14/34
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