METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device composed of a p-type group III nitride semiconductor, the group III nitride semiconductor being not decreased in hole density. SOLUTION: The manufacturing method of the semiconductor device composed of the group III nitride semiconductor includes a plurality of heat treatment processes of≥400°C in temperature after formation of the group III nitride semiconductor layer doped with Mg. In heat treatment processes of≥400°C in temperature other than the final process, heat treatments are carried out in an ammonia atmosphere and in the final heat treatment process of≥400°C in temperature, a heat treatment is carried out in a nitrogen atmosphere. The heat treatments are thus performed to manufacture the semiconductor element without decreasing the hole density of the p-type group III nitride semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT