| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus having small variation in gate electrode shape between a p-MOS transistor and an n-MIS transistor. SOLUTION: The method of manufacturing the semiconductor apparatus includes the stages of: forming a first metal film 18 containing first metal in first and second regions 13 and 14 across a gate insulating film 17; covering the first metal film 18 in the first region 13 with a protective film and removing the first metal film 18 in the second region 14 to expose the gate insulating film 17; forming a second metal film 19 containing second metal different from the first metal on the first metal film 18 and gate insulating film 17; anisotropically etching the second metal film 19 using a mask material having a gate electrode pattern to form a second gate electrode in the second region 14; subjecting exposed portions of the first metal film 18 and second metal film 19 to oxidation treatment; and anisotropically etching the first metal film 18 in the first region 13 to form a first gate electrode in the first region 13. COPYRIGHT: (C)2009,JPO&INPIT
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