| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method for enabling a double patterning process through which a substrate is processed by a single dry etching. <P>SOLUTION: The pattern forming method includes: applying onto a substrate a first positive resist material comprising a polymer compound having copolymerized recurring units having naphthol and recurring units with an alkali solubility that increases under the action of acid, to form a first resist coating; heat treatment; exposure to high-energy radiation; development; causing the first resist coating to crosslink and cure by irradiation of high-energy radiation of sub-200 nm wavelength; further applying a second positive resist material onto the substrate to form a second resist coating; heat treatment; exposure to high-energy radiation; and development. Since a first pattern formed from the first positive resist material is insolubilized in an alkali developer and a resist solution, and the second resist material is further applied thereon, exposed and developed, double patterning that reduces the pitch between patterns to one half can be performed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
