发明名称 |
TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED SILICON |
摘要 |
By embedding a silicon/germanium mixture in a silicon layer of high tensile strain, a moderately high degree of tensile strain may be maintained in the silicon/germanium mixture, thereby enabling increased performance of N-channel transistors on the basis of silicon/germanium material.
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申请公布号 |
US2009108361(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20080112288 |
申请日期 |
2008.04.30 |
申请人 |
WEI ANDY;ROMERO KARLA;HORSTMANN MANFRED |
发明人 |
WEI ANDY;ROMERO KARLA;HORSTMANN MANFRED |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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