| 摘要 |
A semiconductor device includes a circuit having a first data holding node and a second data holding node; a first MOS field-effect transistor coupled to the first data holding node; a second MOS field-effect transistor coupled to the second data holding node; and a clock generation circuit coupled to a first gate electrode of the first MOS field-effect transistor for outputting a clock signal, wherein the first gate electrode is coupled to the second data holding node via the second MOS field-effect transistor, and a second gate electrode of the second MOS field-effect transistor is coupled to the first data holding node via the first MOS field-effect transistor.
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