发明名称 CIRCUIT WITH IMPROVED EFFICIENCY AND CREST FACTOR FOR CURRENT FED BIPOLAR JUNCTION TRANSISTOR (BJT) BASED ELECTRONIC BALLAST
摘要 A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.
申请公布号 US2009108766(A1) 申请公布日期 2009.04.30
申请号 US20070931860 申请日期 2007.10.31
申请人 GENERAL ELECTRIC COMPANY 发明人 CHEN TIMOTHY;KUMAR NITIN;SKULLY JAMES K.
分类号 H05B41/16 主分类号 H05B41/16
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