| 摘要 |
THE PRESENT INVENTION RELATES TO A PHOTORESIST COMPOSITION SUITABLE FOR IMAGE-WISE EXPOSURE AND DEVELOPMENT AS A NEGATIVE PHOTORESIST COMPRISING A NEGATIVE PHOTORESIST COMPOSITION AND AN INORGANIC PARTICLE MATERIAL HAVING AN AVERAGE PARTICLE SIZE EQUAL OR GREATER THAN 10 NANOMETERS, WHEREIN THE THICKNESS OF THE PHOTORESIST COATING FILM IS GREATER THAN 5 MICRONS. THE NEGATIVE PHOTORESIST COMPOSITION IS SELECTED FROM (1) A COMPOSITION COMPRISING (I) A RESIN BINDER, (II) A PHOTOACID GENERATOR, AND (III) A CROSS-LINKING AGENT; OR (2) A COMPOSITION COMPRISING (I) A RESIN BINDER, (II) OPTIONALLY, ADDITION-POLYMERIZEABLE, ETHYLENICALLY UNSATURATED COMPOUND(S) AND (III) A PHOTOINITIATOR.OR (3) A COMPOSITION COMPRISING (I) A PHOTOPOLYMERIZABLE COMPOUND CONTAINING AT LEAST TWO PENDANT UNSATURATED GROUPS; (II) ETHYLENICALLY UNSATURATED PHOTOPOLYMERIZABLE POLYALKYLENE OXIDE HYDROPHILIC COMPOUND(S); AND (III) A PHOTOINITIATOR
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