METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A manufacturing method of a semiconductor substrate is provided to reduce a metal pollution of an SOI(Silicon On Insulator) film by sintering the SOI substrate with temperature of 600~1250°C. A surface of a monocrystalline silicon substrate(10) is activated by a plasma process. The monocrystalline silicon substrate and a quartz substrate(20) are bonded in a low temperature. An SOI substrate which is a semiconductor substrate having an SOI film(12) is prepared. The SOI substrate is sintered. A metal impurity mixed in the SOI film and an interface of the SOI film and the quartz substrate is gettered on a surface region of the silicon film. A semiconductor substrate having a final SOI film(13) is obtained by removing a gettering layer of the silicon film of the SOI substrate.