Package structure of light emitting diode device and fabricating method thereof

摘要

A package structure for photoelectronic devices (31A) comprises a silicon substrate (11), a first insulating layer (21A,21B), a reflective layer (22A,22B), a second insulating layer (23A,23B), a first conductive layer (121,122), a second conductive layer (131,132) and a die (31A). The silicon substrate (11) has a first surface (111) and a second surface (112), wherein the first surface (111) is opposed to the second surface (112). The first surface (111) has a reflective opening (16), and the second surface (112) has at least two electrode via holes (17,18) connected to the reflective opening (16) and a recess (19) disposed outside the electrode via holes (17,18). The first insulating layer (21A,21B) overlays the first surface (111), the second surface (112) and the recesses (19). The reflective layer (22A,22B) is disposed on the reflective opening (16). The second insulating layer (23A,23B) is disposed on the reflective layer (22A,22B). The first conductive layer (121,122) is disposed on the surface of the second insulating layer (23A,23B). The second conductive layer (131,132) is disposed on the surface of the second surface (112) and inside the electrode via holes (17,18). The die (31A) is fixed inside the reflective opening (16) and electrically connected to the first conductive layer (121,122).