| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent diffusion of fluorine in a bottom wiring by forming a fluorine anti-diffusion film after forming a metal pattern on a semiconductor substrate. A metal pattern is formed on a semiconductor substrate(200). A silicone oxide is formed on the metal pattern. A fluorine anti-diffusion film is formed on the metal pattern by injecting silicone to the silicone oxide(210). An interlayer insulation film containing fluorine is formed on the fluorine anti-diffusion film(240). Thickness of the silicone oxide is 250~350Å. The silicone is injected with energy of 250~750KeV and dose quantity of 5E13~5E14 atoms/cm^2.
|
