METHOD FOR CONTACT HOLE PATTERN FORMATION OF SEMICONDUCTOR

摘要

A method for forming a contact hole of a semiconductor device is provided to maximize process cost reduction and device efficiency by converting an ArF process into a KrF process. A scattering hole having the same direction with a gate is generated in a KrF process(S601). An exposure operation is performed into a lighting mode state of a mask and a photoresist with a dipole in forming a hole pattern(S603). A contact hole of a KrF photoresist is formed without distortion of an edge pattern by applying a scattering hole shape of rectangular and a hole arrangement of a shortening direction to a dipole lighting mode(S605).