| 摘要 |
<p>This invention provides an apparatus (1) for oxide film formation. In the apparatus (1), light in an ultraviolet light range is applied to a substrate (7), and, at the same time, a starting gas (G1) of an organosilicon and an ozone gas (G2) are fed to the substrate (7) to form an oxide film on the surface of the substrate (7). The substrate (7) is housed in a treatment furnace (2). A pipe (3) functions to mix the starting gas (G1) and the ozone gas (G2) together at room temperature to prepare a mixture which is then fed into the substrate (7) in the treatment furnace (2). A light source (5) emits and applies light having a wavelength longer than 210 nm in an ultraviolet range to the substrate (7). The amount of the ozone gas (G2) mixed in the starting gas (G1) fed into the pipe (3) is set to a value which is at least a chemical equivalent or more necessary for totally oxidizing the starting gas (G1). According to the apparatus (1) for oxide film formation, the utilization efficiency of the starting gas is enhanced, and, at the same time, an oxide film having excellent electric characteristics can be formed by a film formation process at 200°C or below.</p> |
