FABRICATION METHOD OF ROOM TEMPERATURE PROCESSED THIN FILM STRUCTURE FOR RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

A manufacturing method of a thin film structure for a resistive random access memory device is provided to increase the number of devices per unit dimension by lowering a manufacturing process temperature of a multilayer thin film into a room temperature. A bottom electrode is formed on a substrate. A perovskite oxide thin film is formed on the bottom electrode. A top electrode is formed on the perovskite oxide thin film. The perovskite oxide thin film, the bottom electrode, and the top electrode are formed in a state in which a substrate temperature is maintained into a room temperature. The perovskite oxide thin film, the bottom electrode, and the top electrode are formed in a low pressure state less than a room pressure.